Studies of adsorption and electron-induced dissociation of Fe(CO)₅ on Si(100)FORD, J. S; JACKMAN, R. B.Surface science. 1986, Vol 171, Num 1, pp 197-207, issn 0039-6028Article

Electron beam stimulated chemical vapor deposition of patterned tungsten films on Si(100) = Dépôt chimique en phase vapeur stimulé par faisceau d'électrons de couches de tungstène à motifs sur Si(100)JACKMAN, R. B; FOORD, J. S.Applied physics letters. 1986, Vol 49, Num 4, pp 196-198, issn 0003-6951Article

Chemical vapour deposition on silicon: in situ surface studies = Dépôt chimique en phase vapeur sur le silicium: études de surface in situFOORD, J. S; JACKMAN, R. B.Chemical physics letters. 1984, Vol 112, Num 2, pp 190-194, issn 0009-2614Article

The interaction of WF₆ with Si(100). Thermal and photon induced reactionsJACKMAN, R. B; FOORD, J. S.Surface science. 1988, Vol 201, Num 1-2, pp 47-58, issn 0039-6028Article

Reaction mechanisms for the photon-enhanced etching of semiconductors: an investigation of the UV-stimulated interaction of chlorine with Si(100)JACKMAN, R. B; EBERT, H; FOORD, J. S et al.Surface science. 1986, Vol 176, Num 1-2, pp 183-192, issn 0039-6028Article

Surface-science investigations of the metallization of semiconductors by photochemical deposition and related techniquesFOORD, J. S; JACKMAN, R. B.Journal of the Optical Society of America. B, Optical physics (Print). 1986, Vol 3, Num 5, pp 806-811, issn 0740-3224Article

Ion beam-assisted etching of semiconductors : surface chemistry vs surface physicsJACKMAN, R. B.Vacuum. 1993, Vol 44, Num 3-4, pp 239-243, issn 0042-207XConference Paper

Surface studies of the reactivity of methyl, acetylene and atomic hydrogen at CVD diamond surfacesFOORD, J. S; LOH, K. P; JACKMAN, R. B et al.Surface science. 1998, Vol 399, Num 1, pp 1-14, issn 0039-6028Article

The interaction of atomic hydrogen with adsorbed ethylene and acetylene on Si(100)LYE HING CHUA; JACKMAN, R. B; FOORD, J. S et al.Surface science. 1994, Vol 315, Num 1-2, pp 69-80, issn 0039-6028Article

In situ x-ray photoemission studies of the oxidation of Y-Ba-Cu filmsPRICE, R. J; JACKMAN, R. B; FOORD, J. S et al.Journal of applied physics. 1988, Vol 64, Num 12, pp 6799-6802, issn 0021-8979, 4 p.Article

An X-ray photoelectron spectroscopic investigation of the oxidation of manganese = Etude par spectrométrie de photoélectron RX de l'oxydation du manganèseFOORD, J. S; JACKMAN, R. B; ALLEN, G. C et al.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1984, Vol 49, Num 5, pp 657-663, issn 0141-8610Article

The initial stages of diamond growth : an adsorption study of hof filament activated methane and hydrogen on Si(100)JACKMAN, R. B; LYE HING CHUA; FOORD, J. S et al.Surface science. 1993, Vol 292, Num 1-2, pp 47-60, issn 0039-6028Article

In situ x-ray photoemission studies of the oxidation of Y-Ba-Cu filmsPRICE, R. J; JACKMAN, R. B; FOORD, J. S et al.Journal of applied physics. 1988, Vol 64, Num 12, pp 6799-6802, issn 0021-8979, 4 p.Article

Evidence of an impurity band at an n-GaN/sapphire interfaceMAVROIDIS, C; HARRIS, J. J; JACKMAN, R. B et al.Diamond and related materials. 2003, Vol 12, Num 3-7, pp 1127-1132, issn 0925-9635, 6 p.Conference Paper

DC current and AC impedance measurements on boron-doped single crystalline diamond filmsHAITAO YE; GAUDIN, O; JACKMAN, R. B et al.Physica status solidi. A. Applied research. 2003, Vol 199, Num 1, pp 92-96, issn 0031-8965, 5 p.Conference Paper

Plasma-deposited amorphous silicon carbide films for micromachined fluidic channelsWUU, D.-S; HORNG, R.-H; CHAN, C.-C et al.Applied surface science. 1999, Vol 144-45, pp 708-712, issn 0169-4332Conference Paper

Nanotribology of novel metal dichalcogenidesCOHEN, S. R; FELDMAN, Y; COHEN, H et al.Applied surface science. 1999, Vol 144-45, pp 603-607, issn 0169-4332Conference Paper

Production of large metallic clusters by thermal evaporationBUIU, O; LECLERC, J. L; YAN, S. H et al.Applied surface science. 1999, Vol 144-45, pp 668-671, issn 0169-4332Conference Paper

Auger electron spectroscopy study of interdiffusion, oxidation and segregation during thermal treatment of NiCr/CuNi(Mn)/NiCr thin filmsBAUNACK, S; BRÜCKNER, W; PITSCHKE, W et al.Applied surface science. 1999, Vol 144-45, pp 216-221, issn 0169-4332Conference Paper

Deposition of diamond and diamond-like carbon nuclei by electrolysis of alcohol solutionsTOSIN, M. C; PETERLEVITZ, A. C; SURDUTOVICH, G. I et al.Applied surface science. 1999, Vol 144-45, pp 260-264, issn 0169-4332Conference Paper

Imaging atom probe study of the segregation behaviour of Nb-Ta binary alloysHARZL, M; LEISCH, M.Applied surface science. 1999, Vol 144-45, pp 41-44, issn 0169-4332Conference Paper

Application of self-organizing maps to chemical analysisTOKUTAKA, H; YOSHIHARA, K; FUJIMURA, K et al.Applied surface science. 1999, Vol 144-45, pp 59-63, issn 0169-4332Conference Paper

Angle-resolved tunneling study on the anisotropic gap of Bi-2212 superconducting whiskerMORIKAWA, K; ENOMOTO, H; MATSUBARA, I et al.Applied surface science. 1999, Vol 144-45, pp 534-537, issn 0169-4332Conference Paper

Modelling thin film growth : Monte-Carlo models of fullerite filmsSMITH, R; RICHTER, A.Thin solid films. 1999, Vol 343-4, pp 1-4, issn 0040-6090Conference Paper

Non-destructive chemical analysis of sandwich structures by means of soft X-ray emissionGALNANDER, B; KÄÄMBRE, T; BLOMQUIST, P et al.Thin solid films. 1999, Vol 343-4, pp 35-38, issn 0040-6090Conference Paper